| 參數名稱 | 參數值 |
|---|---|
| Product Status | Obsolete |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 650 V |
| Current - Continuous Drain (Id) @ 25°C | 30A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 140mOhm @ 14.5A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 960μA |
| Gate Charge (Qg) (Max) @ Vgs | 90 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 2100 pF @ 25 V |
| FET Feature | - |
| Power Dissipation (Max) | 86W (Tc) |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-3PF |
| Package / Case | TO-3P-3 Full Pack |
新聞資訊
ROHM Semiconductor 單 FET、MOSFET 產品 R6530ENZC8
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