QS8M31TR
￥5.98
QS8M31 IS COMPLEX TYPE MOSFET(P+
| 參數(shù)名稱 | 參數(shù)值 |
|---|---|
| Product Status | Active |
| Technology | MOSFET (Metal Oxide) |
| Configuration | N and P-Channel |
| FET Feature | - |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 3A (Ta), 2A (Ta) |
| Rds On (Max) @ Id, Vgs | 112mOhm @ 3A, 10V, 210mOhm @ 2A, 10V |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA, 3V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | 4nC @ 5V, 7.2nC @ 5V |
| Input Capacitance (Ciss) (Max) @ Vds | 270pF @ 10V, 750pF @ 10V |
| Power - Max | 1.1W (Ta) |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 8-SMD, Flat Lead |
| Supplier Device Package | TSMT8 |
新聞資訊
ROHM Semiconductor FET、MOSFET 陣列 產(chǎn)品 QS8M31TR
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